| GaInAsP/InP双异质结液相外延片的p-n结偏位 |
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| 引用本文： | 邬祥生,杨易,陈沛然,徐少华,李允平,胡道珊.GaInAsP/InP双异质结液相外延片的p-n结偏位[J].电子与信息学报,1982,4(4):242-247. |
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| 作者姓名： | 邬祥生 杨易 陈沛然 徐少华 李允平 胡道珊 |
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| 作者单位： | 中国科学院上海冶金研究所
(邬祥生，杨易，陈沛然，徐少华，李允平)，中国科学院上海冶金研究所(胡道珊) |
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| 摘 要： | 用扫描电镜电子束感生电流法研究了GaInAsP/InP双异质结液相外延片的p-n结偏位问题。认为Zn沾污是偏位的主要原因之一。用控制Zn的掺入量或用Mg作p型掺杂剂均可制得正常的p-n结。用电化学c-v法测试了部分样品,并与制管后发射光谱进行比较,结果相同。
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| 收稿时间： | 1981-04-11 |
MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE |
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| Wu Xiang-sheng Yang Yi Chen Pei-ran Xu Shao-hua Li Yun-ping Hu Dao-shan.MISPLACED p-n JUNCTION IN D. H. GaInAsP/InP WAFER GROWN BY LPE[J].Journal of Electronics & Information Technology,1982,4(4):242-247. |
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| Authors: | Wu Xiang-sheng Yang Yi Chen Pei-ran Xu Shao-hua Li Yun-ping Hu Dao-shan |
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| Affiliation: | Shanghai Institute of Meallurgy; Academia Sinica |
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| Abstract: | Misplaced p-n junetion in the LPE D. H. GaInAsP/InP wafer is investigated by scanning electron microscope and electron beam-induced current method. It is shown that one of the reasons for the misplaced p-n junetion is Zn contamination. By controlling doping level of p-type dopant Zn, or using Mg as p-type dopant, the correctly located p-n junetion is obtained. The locations of the p-n junetion of some samples are measured by electrochemical c-v method. The results obtained are consistent with the emission spectrum of the LED fabricated from the wafers. |
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