| TSV制程关键工艺设备技术及发展 |
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| 引用本文： | 魏红军,段晋胜.TSV制程关键工艺设备技术及发展[J].电子工业专用设备,2014(5):7-10. |
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| 作者姓名： | 魏红军 段晋胜 |
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| 作者单位： | 中国电子科技集团公司第二研究所,山西太原030024 |
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| 摘 要： | 论述了TSV技术发展面临的设备问题,并重点介绍了深硅刻蚀、CVD/PVD沉积、电镀铜填充、晶圆减薄、晶圆键合等几种制约我国TSV技术发展的关键设备。
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| 关 键 词： | 硅通孔 关键设备 铜填充 |
A Review on TSV Key-equipment Technologies and Development |
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| WEI Hongjun,DUAN Jinsheng.A Review on TSV Key-equipment Technologies and Development[J].Equipment for Electronic Products Marufacturing,2014(5):7-10. |
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| Authors: | WEI Hongjun DUAN Jinsheng |
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| Affiliation: | (The 2nd Research Institute of CETC, Taiyuan 030024, China) |
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| Abstract: | The problems are introduced about TSV equipment technologies in this paper briefly. Key-equipment are focused on the DR/E. CVD/PVD, copper filling.wafer thin. wafer bonding,which is restricting in TSV technology development in our country. |
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| Keywords: | TSV （through silicon via） Key-equipment Copper filling |
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