| 3DIC集成与硅通孔（TSV）互连 |
| |
| 引用本文： | 童志义.3DIC集成与硅通孔（TSV）互连[J].电子工业专用设备,2009,38(3):27-34. |
| |
| 作者姓名： | 童志义 |
| |
| 作者单位： | 中国电子科技集团公司第四十五研究所,北京东燕郊,101601 |
| |
| 摘 要： | 介绍了3维封装及其互连技术的研究与开发现状，重点讨论了垂直互连的硅通孔（TSV）互连工艺的关键技术及其加工设备面临的挑战．提出了工艺和设备开发商的应对措施并探讨了3DTSV封装技术的应用前景。
|
| 关 键 词： | 3D封装 芯片互连 深硅刻蚀 硅通孔(TSV) TSV刻蚀系统 |
3D IC Stacking with TSV Interconnect |
| |
| TONG Zhiyi.3D IC Stacking with TSV Interconnect[J].Equipment for Electronic Products Marufacturing,2009,38(3):27-34. |
| |
| Authors: | TONG Zhiyi |
| |
| Affiliation: | TONG Zhiyi (The 45th Research Institute ofCETC, Beijing 101601, China) |
| |
| Abstract: | The status quo of both research work and its development of 3D package and interconnect technique is reviewed in this paper, and with focus on the key technique of perpendicularity interconnected silicon through hole(TSV) technology and the facing challenges of its processes equipment.At the end, bring forward the response measures for technology and equipment venders and explore the application perspective of 3D TSV package technique. |
| |
| Keywords: | 3D package Dieinterconnect Deep silicon etching Through-silicon-via TSV etch system |
| 本文献已被 维普 万方数据 等数据库收录！ |
