| 微波等离子体刻蚀技术研究 |
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| 引用本文： | 张振宇,胡顺欣,苏延芬,邓建国,刘英坤.微波等离子体刻蚀技术研究[J].电子工业专用设备,2009,38(4):13-18. |
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| 作者姓名： | 张振宇 胡顺欣 苏延芬 邓建国 刘英坤 |
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| 作者单位： | 中国电子科技集团公司第十三研究所,石家庄,050051 |
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| 摘 要： | 以Corial 200M型干法刻蚀机的三种刻蚀模式为基础，分析了微波等离子体刻蚀技术的优缺点．并讨论了下电极结构对干法刻蚀形貌、一致性和重复性的影响。利用微波等离子体刻蚀技术与反应离子刻蚀技术相结合，实现了SiO2各向同性刻蚀，成功应用于质量控制和失效分析等环节。
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| 关 键 词： | 高密度等离子体 微波 干法刻蚀 失效分析 |
The Study of Microwave Plasma Etching Technology |
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| ZHANG Zhenyu,HU Shunxin,SU Yanfen,DENG Jianguo,LIU Yingkun.The Study of Microwave Plasma Etching Technology[J].Equipment for Electronic Products Marufacturing,2009,38(4):13-18. |
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| Authors: | ZHANG Zhenyu HU Shunxin SU Yanfen DENG Jianguo LIU Yingkun |
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| Affiliation: | (The 13th Research Institute of CETC, 050051, Shijiazhuang china) |
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| Abstract: | Based on three etching model of the Corial-200M type dry etching system, microwave plas-ma etching technology was studied, and the impact on the etching profile, consistency and repeatability by changing the cathode structure. By using the microwave plasma etching technology and reactive ion etching technology, SiO2 isotropic etching was realized and applied on quality control and failure anal-ysis successfully. |
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| Keywords: | High density plasma Microwave Dry etching Failure analysis |
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