用于130nm/90nm新工艺开发的铜CMP阻挡层磨料系统(英文)

通过与实验室的CMP和集成工程师合作,采用测试系统观察两种或两种以上混合配方磨料的选择比。实验数据表明,通过改变单个化学试剂组分的浓度改变磨料的选择比效果突出,磨料配方师可以简便地修改磨料配方。这种方法的优点是,如果改变集成方法或特殊膜层,可以很快地重新优化磨料。如SiN膜取代TEOW淀积氧化物膜,对新系统可以容易地重新优化磨料。介绍了几种磨料组分浓度的去除速率和选择比。

Copper CMP Barrier Slurry System for 130nm/90nm New Process Development

By working with the CMP and integration engineers in a fab, using their test structures, the selectivities of two or more fixed formulations are observed. From this data,our slurry designers can readily modify the slurry formulations by using our understanding of how slurry selectivities vary with changing concentrations of individual chemical components.A strength of this approach is that the slurry can quickly be re-optimized if .the integration approach or specific films are changed. For example if a silicon nitride film replaces a TEOS deposited oxide film, the slurry can easily be re-optimized for the new system.