| 电子在半导体多势垒结构中隧穿现象的研究与进展 |
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| 引用本文： | 王洪梅,刘丕均,张亚非.电子在半导体多势垒结构中隧穿现象的研究与进展[J].固体电子学研究与进展,2005,25(4):450-455. |
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| 作者姓名： | 王洪梅 刘丕均 张亚非 |
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| 作者单位： | 薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳科学技术研究院,上海,200030;薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳科学技术研究院,上海,200030;薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳科学技术研究院,上海,200030 |
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| 基金项目： | 上海市科技发展基金项目（No：0215nm030）;国家自然科学基金资助项目（No：50272039） |
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| 摘 要： | 文中以探索多势垒结构的电子隧穿物理及其器件结构与性能为出发点,论述了多势垒结构隧穿现象的研究与进展。概述了一维半导体异质结构隧穿现象的解析解和数值计算。重点介绍了电子通过半导体双势垒结构产生隧穿现象的研究进展,即电子通过双势垒结构横纵波矢的耦合行为与共振准能级及共振准能级寿命的解析计算。
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| 关 键 词： | 势垒 隧穿现象 耦合 共振准能级 寿命 |
| 文章编号： | 1000-3819（2005）04-450-06 |
| 收稿时间： | 2003-09-22 |
| 修稿时间： | 2003-11-18 |
Research and Development of Tunneling Effect through Semiconductor Multi-barrier Structures |
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| WANG Hongmei,LIU Pijun,ZHANG Yafei.Research and Development of Tunneling Effect through Semiconductor Multi-barrier Structures[J].Research & Progress of Solid State Electronics,2005,25(4):450-455. |
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| Authors: | WANG Hongmei LIU Pijun ZHANG Yafei |
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| Abstract: | Starting from investigating the physical properties of tunneling effect through semiconductor multi-barrier structures and optimizing the structures and performance of electronic devices, this paper discusses the research and development of tunneling effect through semiconductor multi-barrier structures. Analytical solutions and numerical examples of tunneling effect through one-dimension semiconductor heterostructures have been summarized. Re- search and development of tunneling effect through semiconductor double barrier structures have been stressed. It includes resonant quasi-levels of coupling between transverse and longitudinal wave through symmetrical double barrier structures and analytical calculation of the resonant quasi-level lifetime in double barrier structures. |
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| Keywords: | potential barrier tunneling effect coupling resonant quasi-level lifetime |
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