| GaAs功率单片脉冲在片测试技术研究 |
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| 引用本文： | 陈金远,陶洪琪,曹敏华,吴振海,郑华,高建峰,张斌.GaAs功率单片脉冲在片测试技术研究[J].固体电子学研究与进展,2012,32(6):579-583. |
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| 作者姓名： | 陈金远 陶洪琪 曹敏华 吴振海 郑华 高建峰 张斌 |
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| 作者单位： | 1. 南京电子器件研究所,南京,210016
2. 南京电子器件研究所,南京,210016;微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 讨论了功率单片在片脉冲测试中在片校准技术、脉冲功率测试技术等难题,并在讨论以上问题的基础上,实现工程化应用,该测试技术能够有效覆盖至40GHz。在建立的脉冲大功率在片测试系统上对输出功率典型值5W的GaAs功率单片放大器进行测试验证,测试结果和装架测试结果相比较,输出功率误差<0.2dB。
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| 关 键 词： | 在片测试 脉冲功率测试 在片校准技术 |
Research of On-wafer Pulse Testing of GaAs Power Amplifier MMIC |
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| CHEN Jinyuan
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TAO Hongqi
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CAO Minhua
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WU Zhenhai
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ZHENG Hua
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GAO Jianfeng
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ZHANG Bin.Research of On-wafer Pulse Testing of GaAs Power Amplifier MMIC[J].Research & Progress of Solid State Electronics,2012,32(6):579-583. |
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| Authors: | CHEN Jinyuan TAO Hongqi CAO Minhua WU Zhenhai ZHENG Hua GAO Jianfeng ZHANG Bin |
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| Affiliation: | 1,2(1 Nanjing Electronic Devices Institute,Nanjing,210016,CHN)(2 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN) |
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| Abstract: | In this paper some key techniques of power amplifier microwave on-wafer testing are discussed including on-wafer testing calibration technique,pulse power on-wafer testing technique,these techniques have been applied to 40 GHz in practice.Based on these techniques,pulse on-wafer testing system has been set up.The difference output power of a 5 W amplifier tested between by using on-wafer pluse testing system and in-package testing system is less than 0.2 dB. |
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| Keywords: | on-wafer testing pulse power testing on wafer calibration technique |
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