| GaAs器件及MMIC的可靠性研究进展 |
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| 引用本文： | 来萍.GaAs器件及MMIC的可靠性研究进展[J].固体电子学研究与进展,1995,15(4):381-390. |
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| 作者姓名： | 来萍 |
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| 作者单位： | 中国电子产品可靠性与环境试验研究所 |
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| 摘 要： | 介绍了国外ＧａＡｓ微波器件及ＭＭＩＣ的可靠性研究进展情况，给出ＧａＡｓＭＥＳＦＥＴ、ＨＥＭＴ和ＭＭＩＣ的主要失效模式和失效机理以及在典型沟道温度下的平均寿命代表值。
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| 关 键 词： | 可靠性，失效模式，失效机理，平均寿命，GaAs器件，MMIC |
The Development of Reliability Research on GaAs Devices and MMICs |
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| Lai Ping.The Development of Reliability Research on GaAs Devices and MMICs[J].Research & Progress of Solid State Electronics,1995,15(4):381-390. |
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| Authors: | Lai Ping |
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| Abstract: | This paper introduces the development of reliability research on GaAs devices and MMICs. The main failure modes and mechanisms for GaAs MES FET,HEMT and MMIC,and their lifetimes under the typical channel temperature are given here. |
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| Keywords: | Reliability Failure Mode Failure Mechanism Average Lifetime GaAs Devices MMICs |
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