| AlGaN/GaN/AlGaN双异质结材料生长及性质研究 |
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| 引用本文： | 董逊,孔月婵,周建军,倪金玉,李忠辉,李亮,张东国,彭大青.AlGaN/GaN/AlGaN双异质结材料生长及性质研究[J].固体电子学研究与进展,2011,31(5):429-432. |
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| 作者姓名： | 董逊 孔月婵 周建军 倪金玉 李忠辉 李亮 张东国 彭大青 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 基于能带理论设计并利用MOCVD技术在76.2 mm蓝宝石衬底上生长了不同GaN沟道层厚度的AlGaN/GaN/AlGaN双异质结材料.室温霍尔测试结果表明:双异质结材料的二维电子气面密度随沟道层厚度增加有所升高并趋于饱和；二维电子气迁移率则随沟道厚度增加明显升高.200 nm厚GaN沟道的双异质结材料方块电阻平均值3...
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| 关 键 词： | 双异质结 二维电子气 方块电阻 |
Growth and Properties of AlGaN/GaN/AlGaN Double Heterostructures |
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| DONG Xun,KONG Yuechan,ZHOU Jianjun,NI Jinyu,LI Zhonghui,LI Liang,ZHANG Dongguo,PENG Daqing.Growth and Properties of AlGaN/GaN/AlGaN Double Heterostructures[J].Research & Progress of Solid State Electronics,2011,31(5):429-432. |
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| Authors: | DONG Xun KONG Yuechan ZHOU Jianjun NI Jinyu LI Zhonghui LI Liang ZHANG Dongguo PENG Daqing |
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| Affiliation: | DONG Xun KONG Yuechan ZHOU Jianjun NI Jinyu LI Zhonghui LI LiangZHANG Dongguo PENG Daqing(Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing,210016,CHN) |
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| Abstract: | AlGaN/GaN/AlGaN double heterostructures with different GaN channel thickness were grown by MOCVD.Room temperature Hall results showed that the 2DEG concentration increases with the increasing channel thickness and goes up saturates when channel thickness reaches 100 nm;the 2DEG mobility increases with the increasing channel thickness obviously.The structure with 200 nm GaN channel exhibited an average sheet resistance of 344.2 Ω/□ and resistance nonuniformity of 1.69%.HEMT device using double heterostructure exhibited much lower gate leakage current. |
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| Keywords: | double heterostructures 2DEG sheet resistance |
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