| SiGe HBT与Si BJT的~(60)Co射线总剂量辐照效应比较 |
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| 引用本文： | 牛振红,郭旗,任迪远,刘月,高嵩.SiGe HBT与Si BJT的~(60)Co射线总剂量辐照效应比较[J].固体电子学研究与进展,2007,27(3):317-319,355. |
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| 作者姓名： | 牛振红 郭旗 任迪远 刘月 高嵩 |
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| 作者单位： | 1. 中国科学院新疆理化技术研究所,乌鲁木齐,830011;中国科学院研究生院,北京,100039
2. 中国科学院新疆理化技术研究所,乌鲁木齐,830011 |
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| 摘 要： | 研究了国产结构参数近似的SiGe HBT与Si BJT在60Coγ射线辐照前和不同剂量辐照后性能的变化,并作了比较。辐照后集电极电流Ic变化很小,基极电流Ib明显增大,表明辐照后电流增益的下降主要是由于Ib的退化所导致。当辐照剂量达到10kGy(Si)时,SiGe HBT和Si BJT的最大电流增益分别下降为77%和55%,表明了SiGe HBT具有比Si BJT更好的抗γ射线辐照性能。对辐射损伤机理进行了探讨。
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| 关 键 词： | SiGe异质结双极晶体管 电离辐射 损伤机理 |
| 文章编号： | 1000-3819（2007）03-317-03 |
| 修稿时间： | 2005-10-172006-02-27 |
A Comparison of the Effects of Total Dose Gamma Irradiation on SiGe HBT and Si BJT |
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| NIU Zhenhong,GUO Qi,REN Diyuan,LIU Gang,GAO Song.A Comparison of the Effects of Total Dose Gamma Irradiation on SiGe HBT and Si BJT[J].Research & Progress of Solid State Electronics,2007,27(3):317-319,355. |
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| Authors: | NIU Zhenhong GUO Qi REN Diyuan LIU Gang GAO Song |
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| Affiliation: | 1. Xinjiang Technical Institute of Physics ga Chemistry, Chinese Academy of Sciences, Urumqi, 830011, CHN; 2. The Graduate School of the Chinese Academy of Sciences, Beijing, 100039, CHN |
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| Abstract: | The total dose radiation effects on SiGe HBT and Si BJT were studied and then compared. It is shown that Ic changes slightly while Ib increases obviously with increasing dose. Thus the degradation of β is dominated by the increasing Ib. The SiGe HBT maintained 77% of peak current gain after 10 kGy(Si), while Si BJT degraded to 55% of peak current gain. The results show that SiGe HBT has much better resistance to Gamma irradiation than Si BJT. |
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| Keywords: | SiGe HBT ionizing radiation mechanism of damage |
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