| 1~26.5GHz GaAs PIN单刀单掷开关单片 |
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| 引用本文： | 陈新宇,冯欧,蒋幼泉,许正荣,黄子乾,李拂晓.1~26.5GHz GaAs PIN单刀单掷开关单片[J].固体电子学研究与进展,2007,27(1):37-39,62. |
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| 作者姓名： | 陈新宇 冯欧 蒋幼泉 许正荣 黄子乾 李拂晓 |
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| 作者单位： | 南京电子器件研究所,南京,210016 |
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| 摘 要： | 采用GaAs PIN二极管,完成1~26.5 GHz的单刀单掷开关单片的设计、制作。SPST开关单片带内插损小于0.5 dB,驻波优于1.1,隔离度大于27 dB,在10~26.5 GHz,隔离度大于37 dB。开关单片采用MOCVD生长的GaAs纵向PIN二极管材料结构,76 mm GaAs圆片工艺加工制作。
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| 关 键 词： | 砷化镓 PIN二极管 单刀单掷 开关 单片 |
| 文章编号： | 1000-3819（2007）01-037-03 |
| 收稿时间： | 2005-08-12 |
| 修稿时间： | 2006-01-20 |
1～26. 5 GHz GaAs PIN Diode SPST Switch MMIC |
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| CHENG Xingyu,FENG Ou,JIANG Youquan,XU Zhengrong,HUANG Ziqian,LI Fuxiao.1～26. 5 GHz GaAs PIN Diode SPST Switch MMIC[J].Research & Progress of Solid State Electronics,2007,27(1):37-39,62. |
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| Authors: | CHENG Xingyu FENG Ou JIANG Youquan XU Zhengrong HUANG Ziqian LI Fuxiao |
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| Abstract: | Wide band GaAs PIN diode SPST switch MMIC is presented in this paper. The insertion loss is less than 0.5 dB, VSWR is better than 1.1, isolation is better than 27 dB for 1- 26.5 GHz frequency range, and isolation is better than 37 dB for 10-26.5 GHz frequency range. These results are obtained using a vertical PIN diode process on MOCVD material. |
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| Keywords: | GaAs PIN diode SPST switch MMIC |
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