|
|||||
|
|
| 用PL谱评测多量子阱红外探测器外延材料 | |
| 引用本文： | 马楠,邓军,牟明威,史衍丽,沈光地.用PL谱评测多量子阱红外探测器外延材料[J].固体电子学研究与进展,2009,29(2). |
| 作者姓名： | 马楠 邓军 牟明威 史衍丽 沈光地 |
| 作者单位： | 1. 北京工业大学,光电子实验室,北京,100022 2. 吉林大学,长春,130012 3. 昆明物理所,昆明,650223 |
| 基金项目： | 国家973计划，国家自然科学基金，国家863计划 |
| 摘 要： | 对GaAs/AlGaAs多量子阱红外探测器外延材料进行了光致荧光谱(PL)测量,结合理论计算,由材料吸收峰位置得到势垒高度以及势阱基态位置,并由此推算出相应的红外探测响应波长。推算结果与器件光电流实验值的对比表明,由光致荧光谱(PL)测量结果计算得到的响应波长与实际器件的响应波长有良好的一致性。 |
| 关 键 词： | 多量子阱 红外 光致荧光谱 |
Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement |
|
| MA Nan,DENG Jun,MU Mingwei,SHI Yanli,SHEN Guangdi.Assessing the Epitaxy Structure of Quantum Well Infrared Photodetector by Photoluminescence Measurement[J].Research & Progress of Solid State Electronics,2009,29(2). | |
| Authors: | MA Nan DENG Jun MU Mingwei SHI Yanli SHEN Guangdi |
| Affiliation: | 1Beijing Opt-electronic Laboratory;Beijing University of Technology;Beijing;100022;CHN;2Jilin University;Changchun;130012;CHN;3Kunming Institute of Physics;Kunming;650023;CHN |
| Abstract: | The photoluminescence(PL)scan has been performed on the material of GaAs/AlGaAs multiple quantum well infrared photodetector(QWIP).With theoretical calculation,the peak response wavelength of the QWIP is determined.The calculated result is coincident with the one from photocurrent spectrum for the same sample very well. |
| Keywords: | multiple quantum wells infrared photoluminescence(PL) |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |