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氨气预氮化制备超薄氮化硅薄膜及电学性能
引用本文:宋捷,王久敏,余林蔚,黄信凡,李伟,陈坤基.氨气预氮化制备超薄氮化硅薄膜及电学性能[J].固体电子学研究与进展,2007,27(4):468-471,492.
作者姓名:宋捷  王久敏  余林蔚  黄信凡  李伟  陈坤基
作者单位:南京大学物理系,固体微结构物理国家重点实验室,南京,210093
基金项目:国家自然科学基金 , 国家重大科学研究计划
摘    要:为寻求制备性能良好的纳米厚度氮化硅(SiN_x)薄膜的方法,采用NH_3等离子体氮化、SiH_4/NH_3等离子增强化学淀积法及先氮化后淀积的方法制备了三种SiN_x薄膜,研究比较了三种薄膜的性质。用X射线光电子谱检测了NH_3等离子体氮化Si片得到的SiN_x薄膜的组分,利用椭圆偏振光谱仪测量薄膜厚度,估算了氮化速率。用NH_3和SiH_4作为反应气,分别在原始硅片和经过NH_3预氮化后的硅片上淀积厚度为5 nm、10 nm和50 nm的SiN_x薄膜。用电容-电压法研究了薄膜样品的电学性质,发现单纯用NH_3等离子体氮化的薄膜不适合做介质膜,而先用NH_3氮化再淀积SiN_x的样品比直接淀积SiN_x的样品界面性能明显改善,界面态密度降低到1~2×10~(11)eV~(-1) cm~(-2)。

关 键 词:等离子增强化学淀积  NH_3等离子体氮化  X射线光电子谱  电容-电压  界面态密度
文章编号:1000-3819(2007)04-468-04
收稿时间:2006-01-04
修稿时间:2006-02-17

Electronic Properties of the Ultrathin Silicon Nitride Films Fabricated with Ammonia Plasma Prenitridation
SONG Jie,WANG Jiumin,YU Linwei,HUANG Xinfan,IA Wei,CHEN Kunji.Electronic Properties of the Ultrathin Silicon Nitride Films Fabricated with Ammonia Plasma Prenitridation[J].Research & Progress of Solid State Electronics,2007,27(4):468-471,492.
Authors:SONG Jie  WANG Jiumin  YU Linwei  HUANG Xinfan  IA Wei  CHEN Kunji
Abstract:In this paper,we investigate and compare the interface state densities and elec- tronic reliabilities of three kinds of ultrathin silicon nitride (SiN_x) film,fabricated in a plasma-en- hanced chemical vapor deposition (PECVD) system by using 1) direct nitridation of single-crystal silicon by ammonia (NH_3) plasma;2) deposition of SiN_x from SiH_4 and NH_3 plasma and 3) method combined of direct nitridation with deposition.The composition and thickness of the films are investigated using XPS (X-ray photoelectron spectroscopy),and spectroscopic ellipsometry (SE),respectively.The interface state density is determined by C-V characteristic measure- ments.We found that the SiNx film prepared by combined method has the lowest interface state density as 1~2×10~(11) eV~(-1) cm~(-2) and has much more reliable electronic insulating properties,com- pared with the film obtained from direct nitridation and deposition only.Our results will be help- ful for the design and fabrication of electronic devices with lower interface state density and im- proved reliability.
Keywords:PECVD  ammonia nitrid  XPS  C-V  interface state density
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