| 基于AlN/GaN异质结的Ka波段GaN低噪声放大器研制 |
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| 引用本文： | 张亦斌,吴少兵,李建平,韩方彬,李忠辉,陈堂胜.基于AlN/GaN异质结的Ka波段GaN低噪声放大器研制[J].固体电子学研究与进展,2021(1):14-17,23. |
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| 作者姓名： | 张亦斌 吴少兵 李建平 韩方彬 李忠辉 陈堂胜 |
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| 作者单位： | ;1.南京电子器件研究所;2.微波毫米波单片集成和模块电路重点实验室 |
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| 摘 要： | 报道了基于AlN/GaN异质结的Ka波段低噪声放大器的研制结果。在SiC衬底上生长AlN/GaN异质结材料结构,采用电子束直写工艺制备了栅长70 nm的"T"型栅结构。器件最大电流密度为1.50 A/mm,最大跨导为650 mS/mm,通过S参数测试外推特征频率和最大频率分别为105 GHz和235 GHz。基于70 nm工艺制备的自偏压三级低噪声放大器,在33~40 GHz小信号增益大于27 dB,典型噪声系数为1.5 dB。
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| 关 键 词： | GAN高电子迁移率晶体管 KA波段 电子束直写 低噪声放大器 |
Fabrication of Ka-band GaN Low Noise Amplifier Based on AlN/GaN Heterojunction |
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| ZHANG Yibin,WU Shaobing,LI Jianping,HAN Fangbin,LI Zhonghui,CHEN Tangsheng.Fabrication of Ka-band GaN Low Noise Amplifier Based on AlN/GaN Heterojunction[J].Research & Progress of Solid State Electronics,2021(1):14-17,23. |
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| Authors: | ZHANG Yibin WU Shaobing LI Jianping HAN Fangbin LI Zhonghui CHEN Tangsheng |
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| Affiliation: | (Nanjing Electronic Devices Institute,Nanjing,210016,CHN;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing,210016,CHN) |
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| Abstract: | The results of Ka-band low noise amplifier based on AlN/GaN heterojunction were reported in this paper.Electron-beam lithography was employed to fabricate a 70 nm T-shaped gate on the AlN/GaN heterojunction structure,which was epitaxially grown on SiC substrate.This device exhibits a maximum current density of 1.50 A/mm and a maximum trans-conductance of 650 mS/mm.An extrinsic characteristic frequency(fT)of 105 GHz and a maximum oscillation frequency(fmax)of235 GHz are deduced from S-parameter.The self-bias three-stage Ka-band low-noise amplifier based on 70 nm process has a small signal gain of greater than 27 dB and a typical noise figure of 1.5 dB between 33~40 GHz. |
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| Keywords: | GaN HEMT Ka-band electron-beam lithography(EBL) low noise amplifier(LNA) |
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