| 用二维数值计算得到三维p-n结击穿特性的方法 |
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| 引用本文： | 徐志平,季超仁.用二维数值计算得到三维p-n结击穿特性的方法[J].固体电子学研究与进展,1986(4). |
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| 作者姓名： | 徐志平 季超仁 |
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| 作者单位： | 上海科技大学
(徐志平)，上海科技大学(季超仁) |
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| 摘 要： | 本文基于大多数p-n结的结面形状在平行于表面的横剖面上常表现为一由光刻图形的圆角决定的圆弧这一特点,提出了一种把三维计算简化为二维计算的数值计算方法.用此方法对平面p-n结的击穿特性进行了分析,得到了平面p-n结击穿电压随图形圆角的曲率而变的曲线.本方法还可推广应用于对圆角区其他特性的研究.
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The Behavior of Three Dimensional p-n Junction Breakdown Obtained by a Two-Dimensional Numerical Method |
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| Abstract: | Based on the circular symmetry of a planar p-n junction in the circular angle region of diffusion window, a method to transfer a three-dimensional numerical analysis into a two-dimensional one is proposed in this paper. Using this method, breakdown voltages of planar p-n junctions are calculated. Some relations between breakdown voltage and curvature radius of the diffusion window are obtained. This method can also be used to analyse other effects in such circular angle. |
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