| 2700V4H-SiC结势垒肖特基二极管 |
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| 引用本文： | 倪炜江,李宇柱,李哲洋,李赟,王雯,贾铃铃,柏松,陈辰.2700V4H-SiC结势垒肖特基二极管[J].固体电子学研究与进展,2011,31(3):223-225,232. |
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| 作者姓名： | 倪炜江 李宇柱 李哲洋 李赟 王雯 贾铃铃 柏松 陈辰 |
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| 作者单位： | 南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京,210016 |
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| 摘 要： | 在76.2 mm 4H-SiC晶圆上采用厚外延技术和器件制作工艺研制的结势垒肖特基二极管(JBS).在室温下,器件反向耐压达到2700 V.正向开启电压为0.8V,在VF=2V时正向电流密度122 A/cm2,比导通电阻Ron=8.8 mΩ·cm2.得到肖特基接触势垒qφв=1.24 eV,理想因子n=1.
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| 关 键 词： | 4H-SiC 结势垒肖特基二极管 高耐压 |
2700 V 4H-SiC JBS |
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| NI Weijiang,LI Yuzou,LI Zheyang,LI Yun,WANG Wen,JIA Lingling,BAI Song,CHEN Chen.2700 V 4H-SiC JBS[J].Research & Progress of Solid State Electronics,2011,31(3):223-225,232. |
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| Authors: | NI Weijiang LI Yuzou LI Zheyang LI Yun WANG Wen JIA Lingling BAI Song CHEN Chen |
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| Abstract: | The junction barrier schottky diodes(JBS)are fabricated on a 76.2 mm 4H-SiC wafer based on in-hourse epitaxy and device technology.At room temperature,the diodes have a blocking voltage up to 2 700 V.Threshold voltage is 0.8 V,and current density is 122 A/cm~2at V_F=2 V with specific on resistance down to 8.8 mΩ?cm~2.The schottky contact barrier(qΦ_B)of 1.24 eV and the ideality factor(n)of 1 are obtained. |
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| Keywords: | 4H-SiC Junction barrier schottky diodes high blocking voltage |
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