| 应用于GSM/EDGE零中频接收机的CMOS射频前端 |
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| 引用本文： | 熊斯,黄煜梅,洪志良.应用于GSM/EDGE零中频接收机的CMOS射频前端[J].固体电子学研究与进展,2011,31(3):251-256. |
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| 作者姓名： | 熊斯 黄煜梅 洪志良 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 国家高技术研究发展计划资助项目 |
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| 摘 要： | 介绍了一个零中频接收机CMOS射频前端,适用于双带(900MHz/1800 MHz)GSM/EDGE;E系统.射频前端由两个独立的低噪声放大器和正交混频器组成,并且为了降低闪烁噪声采用了电流模式无源混频器.该电路采用0.13 μm CMOS工艺流片,芯片面积为0.9 mm×1.0 mm.芯片测试结果表明:射频前端在90...
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| 关 键 词： | 全球移动通讯系统 射频前端 低噪声放大器 混频器 |
A RF CMOS Zero-IF Receiver Front-end for GSM/EDGE |
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| XIONG Si,HUANG Yumei,HONG Zhiliang.A RF CMOS Zero-IF Receiver Front-end for GSM/EDGE[J].Research & Progress of Solid State Electronics,2011,31(3):251-256. |
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| Authors: | XIONG Si HUANG Yumei HONG Zhiliang |
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| Abstract: | A RF CMOS zero-IF receiver front-end for dual-band(900 MHz/1800 MHz) GSM/EDGE applications is presented.The RF front-end comprises two separate LNAs and quadrature mixers.The current mode passive mixers are employed to lower the flicker noise.The RF front-end is manufactured in a 0.13μm CMOS process and occupies an active chip area of 0.9 mm×1.0 mm.The RF front-end achieves a NF of 2.9 dB and 3.2 dB,IIP3 of-12.8 dBm and -11.9 dBm for the low band(900 MHz)and the high band(1800 MHz),respectively.The front-end consumes 16.3 mA at 1.2 V for the low band and 2 mA more for the high band. |
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| Keywords: | GSM RF front-end low-noise amplifier mixer |
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