| GaAs MMIC抗静电能力研究 |
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| 引用本文： | 叶禹康 孙伟东. GaAs MMIC抗静电能力研究[J]. 固体电子学研究与进展, 1999, 19(4): 433-437 |
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| 作者姓名： | 叶禹康 孙伟东 |
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| 作者单位： | 南京电子器件研究所!210016 |
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| 摘 要： | 用人体静电放电模拟器对以ＧａＡｓ ＭＥＳＦＥＴ为主要有源器件的ＭＭＩＣ的静电敏感度进行研究，叙述了在ＭＭＩＣ设计、工艺制作等环节防静电和提高ＭＭＩＣ抗静电能力的措施，采用这些措施后，低噪声ＭＭＩＣ静电损伤阈值达到５００～８００ Ｖ。
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| 关 键 词： | 静电放电 砷化镓微波单片集成电路 静电敏感度 |
Investigation of the ESD Threshold Level for GaAs MMIC |
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| Ye Yukang Sun Weidong Yu Tufa Jin Yuquan. Investigation of the ESD Threshold Level for GaAs MMIC[J]. Research & Progress of Solid State Electronics, 1999, 19(4): 433-437 |
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| Authors: | Ye Yukang Sun Weidong Yu Tufa Jin Yuquan |
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| Abstract: | By using ESD (electrostatic discharge) HBM (human body model) waveform generator the electrostatic sensitivity of GaAs MMIC which is the major active device composed of GaAs MESFET has been studied. In this paper, by using the techniques of properly design of MMIC ESD protection circuit and process, the increase of MMIC ESD threshold level can be obtained. The ESD threshold level of low noise MMIC was greater than 500～800 V. |
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| Keywords: | Electrostatic Discharge GaAs MMIC Electrostatic Sensitivity |
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