低压低能耗应用的InGaAs／AlGaAsPHEMT单片微波SPDT开关

提出了微波频率下ＰＨＥＭＴ在作开关运用时一种简化的等效电路模型，其模型参数可从对实际ＰＨＥＭＴ芯片的在片微波测试方便地确定。对于电路中元件采用不同尺寸组合情形下所进行的开关性能（插入损耗，隔离度，输入及输出反射损耗）的模拟计算表明，与实验结果符合良好。在对串／并联ＰＨＥＭＴ型ＳＰＤＴ开关的ＣＡＤ优化设计基础上进行了ＩｎＧａＡｓ／ＡｌＧａＡｓＰＨＥＭＴ单片ＳＰＤＴ微波开关的实验研制。从研制的ＭＭＩＣ芯片上在片测试得到的结果为：对应新的个人通信频段的应用，在０～２ＧＨＺ范围内，插入损耗＜１．０ｄＢ，隔离度＞５０ｄＢ，输入及输出反射损耗均优于２４ｄＢ。研制的这种高性能单片开关还可在低至－２．０Ｖ的控制电压下工作。

InGaAs/AIGaAs PHEMT Monolithic Microwave SPDT Switch for Low-Bias and Low-Consumption Application

A simplified model of switching PHEMT at microwave frequencies has been proposed. The model parameters are determined easily by on-wafer RF-test of chipped PHEMTs. In terms of switch performance (insertion loss,isolation,input and output return losses), a good agreement between simulation calculation and experimental result has been shown under different circuit element sizes used.Based on optimization of series/shunt PHEMT type SPDT switch design,the experimental results which are directly on-wafer measured from the fabricated InGaAs/AIGaAs monolithic SPDT switch chips are: insertion loss<1. 0 dB; isolations>50 dB;both input and output return losses of better than 24 dB in the frequency range of 0-2 GHz,that is applicable to new personal communication use. The fabricated MMIC switch with state-of-the-art performance can operate successfully at low control voltage even 2 V of .