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蓝光半导体碳化硅──材料、器件和工艺
引用本文:张荣,施洪涛.蓝光半导体碳化硅──材料、器件和工艺[J].固体电子学研究与进展,1996,16(2):94-102.
作者姓名:张荣  施洪涛
作者单位:南京大学物理系
基金项目:国家教委跨世纪人才专项基金,国家自然科学基金
摘    要:碳化硅(SiC)是目前主要的蓝光半导体材料之一,国际上已初步实现了SiC蓝光发光二极管的产业化。目前商品器件工作电压3.0V,工作电流20mA时,发射波长470nm,功率18μW,工作电流50mA时,辐射功率可达36μW。最近的实验研究发现,采用SiC和氮化镓的合金制成的LED可大幅度提高发光效率,其发射功率的实验室水平已达850mW。文中从SiC材料特性、SiC发光器件及SiC材料、器件工艺等几方面入手,综述了SiC作为蓝光半导体材料及其器件和工艺的研究进展。

关 键 词:碳化硅,蓝光发光二极管,器件,工艺

Blue Light Emitting Semiconductor SiC: Material,Device and Technology
Zhang Rong, Shi Hongtao, Yu Shidong, Yang Kai, Shen Bo, Zheng Youdou.Blue Light Emitting Semiconductor SiC: Material,Device and Technology[J].Research & Progress of Solid State Electronics,1996,16(2):94-102.
Authors:Zhang Rong  Shi Hongtao  Yu Shidong  Yang Kai  Shen Bo  Zheng Youdou
Abstract:Silicon carbide is one of main blue-light emitting semiconductor materials,and the SiC blue LED has been developed and commercialized. The radiant wavelength of the SiC product peaks at 470 nm, while the radiant flux is 18μW under the condition of V=3. 0 V, I=20 mA, and 36μW under the condition of V=3. 0 V, I=50 mA. Recent investigations show that the blue LED made up of (SiC)1-x.(GaN)x alloy has high luminous efficiency,and the radiant fulx is 850 mW.In this paper, the research progress of the SiC material,device and technology, especially for the blue LED application are reviewed.
Keywords:Silicon Carbide Blue LED Device Technology
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