| X波段GaN单片电路低噪声放大器 |
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| 引用本文： | 周建军,彭龙新,孔岑,李忠辉,陈堂胜,焦刚,李建平.X波段GaN单片电路低噪声放大器[J].固体电子学研究与进展,2011,31(1):16-19. |
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| 作者姓名： | 周建军 彭龙新 孔岑 李忠辉 陈堂胜 焦刚 李建平 |
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| 作者单位： | 单片集成电路和模块国家级重点实验室,南京电子器件研究所,南京,210016 |
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| 摘 要： | 采用0.25μm GaN HEMT制备工艺在AlGaN/GaN异质结材料上研制了高性能X波段GaN单片电路低噪声放大器.GaN低噪声单片电路采取两级微带线结构,10V偏压下芯片在X波段范围内获得了低于2.2 dB的噪声系数,增益达到18 dB以上,耐受功率达到了27 dBm.在耐受功率测试中发现GaN低噪声HEMT器件...
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| 关 键 词： | 低噪声放大器 微波单片集成电路 氮化镓高迁移率晶体管 |
X-band GaN MMIC Low Noise Amplifier |
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| ZHOU Jianjun,PENG Longxin,KONG Cen,LI Zhonghui,CHEN Tangsheng,JIAO Gang,LI Jianping.X-band GaN MMIC Low Noise Amplifier[J].Research & Progress of Solid State Electronics,2011,31(1):16-19. |
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| Authors: | ZHOU Jianjun PENG Longxin KONG Cen LI Zhonghui CHEN Tangsheng JIAO Gang LI Jianping |
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| Abstract: | A high performance GaN MMIC low noise amplifier based on 0.25 μm AlGaN/GaN HEMT technology on SiC substrate is presented operating in the X-band. A noise figure NF below 2.2 dB is measured from 8.5～10.5 GHz under 10V.And a linear gain G of the MMIC higher than 18 dB is also measured.The survivability of the LNA is assessed by the stress-tests,in the input up to 27 dBm for 10 min.During the stress-tests,a recovering effect of the GaN low noise HEMT is observed. |
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| Keywords: | low noise amplifier(LNA) MMIC GaN HEMT |
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