| GaAs晶片化学机械抛光的机理分析 |
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| 引用本文： | 卜俊鹏,郑红军.GaAs晶片化学机械抛光的机理分析[J].固体电子学研究与进展,1997,17(4):399-402. |
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| 作者姓名： | 卜俊鹏 郑红军 |
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| 作者单位： | 中国科学院半导体研究所!北京，100083 |
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| 摘 要： | 在不同条件下（系统pH值，磨粉浓度，氧化剂浓度），通过对GaAs化学机械抛光速率变化规律的研究和对晶片表面氧化层的俄联（AES）分析，探讨了H2O2胶体磨料化学机械抛光的作用过程（表面氧化十机械磨除＋化学去除）和系统pH值对其过程的影响。
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| 关 键 词： | GaAs 抛光 机理分析 |
GaAs Wafer Chemomechanical Polishing Mechanism |
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| Bu Junpeng, Zheng Hongjun, He Hongjia, Wu Rangyuan.GaAs Wafer Chemomechanical Polishing Mechanism[J].Research & Progress of Solid State Electronics,1997,17(4):399-402. |
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| Authors: | Bu Junpeng Zheng Hongjun He Hongjia Wu Rangyuan |
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| Abstract: | Under different polishing conditions (pH value of polishing solution,concentration of colloidal Si and H2O2) the chemomechanical polishing rate of GaAs wafer is measured and the surface analyses are accomplished by Auger Electron Spectroscopy(AES). It is assumed that the chemomechanical polishing is the process including chemical reaction, mechanical removing and chemical removing. It shows how the pH value of polishing solution influences the GaAs polishing process. |
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| Keywords: | GaAs Polishing Mecbanism Analysis |
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