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| 高可靠高亮度AlGaInP发光二极管 | |
| 引用本文： | 田咏桃,仉志华,郭伟玲,沈光地.高可靠高亮度AlGaInP发光二极管[J].固体电子学研究与进展,2006,26(2):205-208. |
| 作者姓名： | 田咏桃 仉志华 郭伟玲 沈光地 |
| 作者单位： | 1. 中国石油大学(华东)物理科学与技术学院,山东,东营,257061 2. 中国石油大学(华东)信息与控制工程学院,山东,东营,257061 3. 北京工业大学,北京市光电子技术实验室,北京,100022 |
| 基金项目： | 国家研究发展基金 , 山东省东营市教育局资助项目 , 广西自然科学基金 |
| 摘 要： | 分析了隧道再生双有源区A lG aInP发光二极管的工作原理,测试了不同注入电流下管芯的轴向光强,得到了轴向光强随注入电流的变化关系。20 mA注入电流条件下,发射峰值波长为620 nm的隧道再生双有源区A lG aInP发光二极管,透明封装成视角15°后平均轴向光强达到5.5 cd。对透明封装成15°隧道再生双有源区发光二极管进行了寿命实验,在温度为25°C、30 mA直流电流条件下,隧道再生双有源区A lG aInP发光二极管的寿命超过了1.2×105h。 |
| 关 键 词： | 铝镓铟磷 发光二极管 隧道结 可靠性 |
| 文章编号： | 1000-3819(2006)02-205-04 |
| 收稿时间： | 2004-04-14 |
| 修稿时间： | 2004-06-10 |
Highly Reliability and Brightness AIGaInP Light-emitting Diodes |
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| TIAN Yongtao,ZHANG Zhihua,GUO Weiling,SHEN Guangdi.Highly Reliability and Brightness AIGaInP Light-emitting Diodes[J].Research & Progress of Solid State Electronics,2006,26(2):205-208. | |
| Authors: | TIAN Yongtao ZHANG Zhihua GUO Weiling SHEN Guangdi |
| Abstract: | The operating principal of tunneling-regenerated-double-active-region(TRDAR) AlGaInP light-emitting diodes is analyzed on-axis luminous intensity is tested under different injected current and the relationship between on-axis luminous intensity and injected current is offered in this paper.The emitting peak wavelength of TRDAR AlGaInP light-emitting diodes is 620 nm at 20 mA. The average on-axis luminous intensity of TRDAR AlGaInP light-emitting diodes lamps with 15° viewing angle is 5.5 cd.Its life test is carried,and the lifetime of TRDAR AlGaInP light-emitting diodes has exceeded 1.2×10~5hours under conditions of 30 mA direct current and(25°C) ambient temperature. |
| Keywords: | AlGalnP light-emitting diodes tunnel junction reliability |
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