| 两步快退火改善InP（Fe）中MeV硅注入层的品质 |
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| 引用本文： | 姬成周,张燕文,李国辉,王文勋,苏里曼.两步快退火改善InP（Fe）中MeV硅注入层的品质[J].固体电子学研究与进展,1995,15(3):281-286. |
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| 作者姓名： | 姬成周 张燕文 李国辉 王文勋 苏里曼 |
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| 作者单位： | 北京师范大学，北京电子管厂 |
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| 基金项目： | 国家自然科学基金,射线束材料工程实验室资助 |
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| 摘 要： | ２ＭｅＶ、（１～２）×１０１４ｃｍ－２硅离子注入ＳＩ－ＩｎＰ（Ｆｅ）造成负的（－３．４×１０－４～－２．９×１０－４）晶格应变，光快速退火的激活能为０．２６ｅＶ。８８０℃／１０ｓ退火可得到１００％的施主激活。间断两步退火（３７５℃／３０ｓ＋８８０℃／１０ｓ）使注入层单晶恢复完全，较大程度（２０％～３５％）地改善了载流子的迁移率。四能量叠加注入已能在０．５～３．０μｍ的深度区域形成满足某些器件要求的低电阻（７．５Ω）高浓度［（２～３）×１０１８ｃｍ－３］的ｎ型导电层。
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| 关 键 词： | MeV离子注入，磷化铟，两步退火 |
A Two-Step Annealing to Improve the Quality of MeV St￣+-Implanted Layer in SI-InP(Fe) |
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| Ji Chengzhou, Zhang Yanwen, Li Guohui, Wang Wenxun.A Two-Step Annealing to Improve the Quality of MeV St￣+-Implanted Layer in SI-InP(Fe)[J].Research & Progress of Solid State Electronics,1995,15(3):281-286. |
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| Authors: | Ji Chengzhou Zhang Yanwen Li Guohui Wang Wenxun |
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| Abstract: | MeV and (1～2)×1014 cm-2 Si+-implanted SI-InP(Fe) shows negative lattice deformation (-3.4×10-4～2.9×10-4). An activation energy of 0. 26 eV is found for halogen lamp rapid thermal annealing (RTA). The activation rate of St+-implants approaches 100% when annealed at 880℃ for 10 sec. A twostep RTA (375℃ /30 s+880℃/10 s) can improve carrier mobility to a large extent (20%-35%) because of perfect lattice recovery of the implanted layer. A thick deeply-buried (0. 5-3. 0μm below surface) n+ active layer has been created by a four-energy overlap implantation, which has a carrier concentration of (2.0-3.0)×1018 cm-3 and a sheet resistance of 7. 5 ohm to meet requirements of some specific devices. |
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| Keywords: | MeV Ion Implantation Indium Phosphide Two-step Annealing |
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