| 汽相生长GaAs/Ga_xIn_(1-x)As/GaAs异质结材料 |
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| 引用本文： | 黄善祥.汽相生长GaAs/Ga_xIn_(1-x)As/GaAs异质结材料[J].固体电子学研究与进展,1988(3). |
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| 作者姓名： | 黄善祥 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 提出了一种汽相生长GaAs/Ga_xIn_(1_x)As/GaAs的方法,当x≈0.85,顶层GaAs厚度为0.1～0.2μm时,迁移率仍然可达2000～3000cm~2/V·s,外延层的纵向掺杂分布陡峭。用该材料制得的异质结场效应晶体管显示出HEMT的性能,77K下未观察到持续光电导效应和I—V特性崩塌。
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Heterojunction Vapour Epitaxy of GaAs/Ga_xln_(1-x)As/GaAs |
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| Abstract: | A method for heterojunction epitaxy of GaAs/GaxIn1-xAs/GaAs is presented.When x =0.85 and the thicknesses of the top GaAs layers are in the range of 0.1-0.2μm the mobilities still reach 2000-3000cm2/V·s, with very sharp longitudinal doping profiles. Heterojunction FETs fabricated with these meterials exhibit HEMT's performance. No persistent photoconductivity or drain current collapse is observed at 77K. |
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