低气压高密度等离子体刻蚀轮廓的数值研究

低气压、高密度等离子体刻蚀轮廓的数值研究对于研究高密度等离子体刻蚀工艺具有重要意义。文中提出了一个二维低气压、高密度等离子体刻蚀轮廓的理论模型 ,并利用“线”算法进行了数值模拟。与以往不同之处在于 ,模型中引入了掩模对入射粒子流的遮蔽效应和中性粒子在不同刻蚀表面的粘附系数的影响 ,使得模拟结果的准确性大大提高。论文最终还给出了要获得各向异性刻蚀的 e VS/k Ti 和 Γn0 /Γi0 的取值范围

Numerical Studies on Etching Profiles in Low-pressure High-density Plasma

Modeling low pre s sure, high density plasma etching is hig hly significant for high density plasma etching processing research. A two dimen sional theory model of low pressure, hig h density plasma etching is presented. T he model has been numerically simulated by using "string" algorithm. The feature is that the influence of shadowing effe cts of the mask edge for the incident pa rticle flux and the sticking coefficient of the neutral flux at different etchin g surface is introduced, which improves accuracy of the simulating results. At l ast, the value range of eV S/ kT i an d Γ n0 / Γ i0 for low pressure, hi gh density plasma anisotropy etching has also been obtained.