| 深槽Ni(Pt)Si/Si肖特基二极管特性研究 |
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| 引用本文： | 张慧,张利春,高玉芝,金海岩.深槽Ni(Pt)Si/Si肖特基二极管特性研究[J].固体电子学研究与进展,2005,25(2):167-171,230. |
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| 作者姓名： | 张慧 张利春 高玉芝 金海岩 |
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| 作者单位： | 北京大学微电子学研究院,北京,100871 |
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| 摘 要： | 采用15nmNi/1.5nmPt/15nmNi/Si结构在600～850°C范围内经RTP退火的方法形成Ni(Pt)Si薄膜,其薄膜电阻低且均匀一致。比形成较低电阻率的NiSi薄膜的温度提高了150°C。在850°CRTP退火后形成的Ni(Pt)Si/Si肖特基势垒二极管I-V特性很好,其势垒高度ΦB为0.71eV,改善了肖特基二极管的稳定性。实验表明在肖特基二极管中引入深槽结构,可以大幅度地提高其反向击穿电压。在外延层浓度为5E15cm-3时,深槽器件的击穿电压可以达到80V,比保护环器件高约30V。
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| 关 键 词： | 肖特基二极管 镍硅 镍(铂)硅 深槽 |
| 文章编号： | 1000-3819(2005)02-167-05 |
The Characteristics of Ni (Pt) Si/Si Schottky Barrier Diode with Deep Trench |
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| ZHANG Hui,Zhang Lichun,GAO Yuzhi,Jin Haiyan.The Characteristics of Ni (Pt) Si/Si Schottky Barrier Diode with Deep Trench[J].Research & Progress of Solid State Electronics,2005,25(2):167-171,230. |
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| Authors: | ZHANG Hui Zhang Lichun GAO Yuzhi Jin Haiyan |
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| Abstract: | In this paper, Ni(Pt)Si film is formed using the structure Ni/Pt/Ni/Si after the RTP, and the sheet resistance of Ni(Pt)Si film is rather low during 600～850~°C . This temperature is 150~°C higher than that of NiSi film. Ni(Pt)Si/Si schottky barrier diode, which goes through 850~°C RTP, has good I-V characteristics. The corresponding Schottky barrier height Φ_B of 0.71 eV is obtained. We think that the film of Ni(Pt)Si has the better stability than NiSi. The experiment shows that the deep trench to replace guard ring in schottkey diode can greatly increase the reverse breakdown voltage of the device. When the impurity concentration in epitaxial substrate is 5E15 cm~-3 , the breakdown voltage of device with deep trench is up to 80 V, while device with guard ring is only 50 V. |
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| Keywords: | schottky barrier diode NiSi Ni(Pt)Si deep trench |
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