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高性能U波段砷化镓体效应二极管
引用本文:张晓,邓衍茂,张蕾,李熙华,王海涛,刘萍,钱刚,夏丽华,杨向云,赵咏梅.高性能U波段砷化镓体效应二极管[J].固体电子学研究与进展,2010,30(2).
作者姓名:张晓  邓衍茂  张蕾  李熙华  王海涛  刘萍  钱刚  夏丽华  杨向云  赵咏梅
作者单位:南京电子器件研究所,南京,210016
摘    要:介绍了一种新型的高性能毫米波砷化镓体效应二极管,通过对材料、参数、工艺的优化与设计,较好地解决了高工作频率与高输出功率之间的矛盾,实现了器件性能的提升与突破。在U波段,最大连续波输出功率达180mW,最高转换效率约5%。

关 键 词:体效应管  U波段  双区阴极  热沉  低应力电镀

A High-performance U-band GaAs Gunn Diode
ZHANG Xiao,DENG Yanmao,ZHANG Lei,LI Xihua,WANG Haitao,LIU Ping,QIAN Gang,XIA Lihua,YANG Xiangyun,ZHAO Yongmei.A High-performance U-band GaAs Gunn Diode[J].Research & Progress of Solid State Electronics,2010,30(2).
Authors:ZHANG Xiao  DENG Yanmao  ZHANG Lei  LI Xihua  WANG Haitao  LIU Ping  QIAN Gang  XIA Lihua  YANG Xiangyun  ZHAO Yongmei
Abstract:This paper introduces the development of a new high-performance millimeter-wave GaAs Gunn diodes.Through the optimization of system design,the contradiction between the high operation frequency and high output power has been better solved,resulting in an improvement on performance of the Gunn diodes.At U-band,the highest output power is 180 mW,the highest efficiency of conversion is about 5%.
Keywords:Gunn diode  U-band  two zone cathode  heat sink  low stress plating
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