快速热氮化SiO_xN_y薄膜界面氮化反应模型

提出了快速热氮化二氧化硅膜技术界面氮化模型。由该模型认为，快速热氮化二氧化硅膜中固定电荷及界面态的变化是高温处理及氮化剂向界面扩散并在界面处参与反应两种过程造成的。高温处理带来固定电荷及界面态增大。而氮化剂在界面处的反应存在五种方式，这五种反应对固定电荷及界面态的影响各不相同：有的增大固定电荷，有的减少固定电荷；有的增大界面态，有的减少界面态。高温处理及这五种反应的综合结果，影响了快速热氮化二氧化硅膜中固定电荷及界面态。文中从这一模型出发，提出了关于固定电荷变化的计算公式。

Interface Nitridation Model of the Rapid Thermal Nitrided SiO_2 Film

In this paper,the interface nitridation model of the rapid thermal nitrided SiO2 film is proposed. The model attributes the changes of both the fixedcharges and the interface states in rapid thermal nitrided SiO2 film to the high temperature heat treatment and to the nitrider diffusion into interface and its reaction atthe interface. The fixed charges and the interface states increase when the film istreated at high temperature. When the nitrider arrives at the Si-SiO2 interface,thereare five kinds of nitridation reaction taking place, whose effects on the interfaceelectrical characteristics are different. Some increase the fixed charges and the interface states, the others decrease them. Some simple calculation formulas of thechanges of the fixed charges are given. From this model,the changes of the fixedcharges in the film are analysed and calculated.