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| GaAs基InAlAs/InGaAsMHEMT直流特性研究 | |
| 引用本文： | 李献杰,敖金平,曾庆明,刘伟吉,徐晓春,刘式墉,梁春广.GaAs基InAlAs/InGaAsMHEMT直流特性研究[J].固体电子学研究与进展,2002,22(2):235-237. |
| 作者姓名： | 李献杰 敖金平 曾庆明 刘伟吉 徐晓春 刘式墉 梁春广 |
| 作者单位： | 1. 河北半导体研究所,石家庄,050051;吉林大学电子工程系,长春,130023 2. 河北半导体研究所,石家庄,050051 3. 吉林大学电子工程系,长春,130023 |
| 摘 要： | 报道了用 MBE技术生长的 Ga As基 In Al As/In Ga As改变结构高电子迁移率晶体管 (MHEMT)的制作过程和器件的直流性能。对于栅长为 0 .8μm的器件 ,最大非本征跨导和饱和电流密度分别为 3 5 0 m S/mm和1 90 m A/mm。源漏击穿电压和栅反向击穿电压分别为 4V和 7.5 V。这些直流特性超过了相同的材料和工艺条件下 Ga As基 PHEMT的水平 ,与 In P基 In Al As/In Ga As HEMT的性能相当 |
| 关 键 词： | 砷化镓 铟铝砷/铟镓砷 改变结构高电子迁移率晶体管 |
| 文章编号： | 1000-3819(2002)02-235-03 |
| 修稿时间： | 2001年9月15日 |
DC Performance of GaAs-based InAlAs/InGaAs MHEMT |
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| LI Xianjie , AO Jinping ZENG Qingming LIU Weiji XU Xiaochun LIU Shiyong LIANG Chunguang.DC Performance of GaAs-based InAlAs/InGaAs MHEMT[J].Research & Progress of Solid State Electronics,2002,22(2):235-237. | |
| Authors: | LI Xianjie AO Jinping ZENG Qingming LIU Weiji XU Xiaochun LIU Shiyong LIANG Chunguang |
| Affiliation: | LI Xianjie 1,2 AO Jinping 1 ZENG Qingming 1 LIU Weiji 1 XU Xiaochun 1 LIU Shiyong 2 LIANG Chunguang 1 |
| Abstract: | Fabrication and performance of GaAs based InAlAs/InGaAs Metamorphic High Electron Mobility Transistor (MHEMT) were reported. Maximum extrinsic transconductance and maximum saturation current density are 350 mS/mm and 190 mA/mm respectively for the devices with gate length of 0.8 μm. Drain to source breakdown voltage and Schottky breakdown voltage are 4 V and 7.5 V, respectively. The devices have shown better DC performance than GaAs based PHEMTs and comparable performance to InP based HEMTs. |
| Keywords: | GaAs InAlAs/InGaAs MHEMT |
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