| AlAs氧化层的Raman研究 |
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| 引用本文： | 王文冲,贾海强,陈弘,王文新,李卫,黄绮,周均铭.AlAs氧化层的Raman研究[J].固体电子学研究与进展,2002,22(2):193-194,214. |
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| 作者姓名： | 王文冲 贾海强 陈弘 王文新 李卫 黄绮 周均铭 |
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| 作者单位： | 中国科学院物理研究所凝聚态物理中心,北京,100080 |
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| 摘 要： | 利用 Nomarski光学显微镜和 Raman光谱仪对分子束外延生长的 Al As层热氧化进行了系统的研究。对未氧化 ,氧化及氧化加原位退火的样品分析表明 ,目前氧化热稳定性差的主要因素是随氧化进行而产生的可挥发性产物如 As、As2 O3在氧化层中的残留量。在此分析的基础上 ,优化了氧化条件 ,使 Al As氧化的热稳定性有了质的提高 ,可以经受较高温度的退火 ,并消除了氧化层与两边 Ga As层之间的崩裂现象
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| 关 键 词： | 分子束外延 砷化铝 氧化 |
| 文章编号： | 1000-3819(2002)02-193-02 |
The Raman Study of AlAs Oxidation Layers |
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| WANG Wenchong,JIA Haiqiang,CHEN Hong,WANG Wenxin,LI Wei,HUANG Qi,ZHOU Junming.The Raman Study of AlAs Oxidation Layers[J].Research & Progress of Solid State Electronics,2002,22(2):193-194,214. |
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| Authors: | WANG Wenchong JIA Haiqiang CHEN Hong WANG Wenxin LI Wei HUANG Qi ZHOU Junming |
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| Abstract: | The Molecular Beam Epitaxy (MBE) grown AlAs layer sandwiched between GaAs was systematically studied by Raman spectrum and Nomarski microscopy. By analysis from the un oxidized and oxidized samples in situ with and without annealing, it was found that the thermal stability of the samples was very dependent on the removal of the volatile productions such as As and As 2O 3. By optimizing oxidation conditions, we obtained the oxidation layers with good thermal stability of bearing with annealing at higher temperature without cracking. |
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| Keywords: | MBE AlAs oxidation |
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