| Al/TiSi_2/Si系统与肖特基势垒二极管的热稳定性 |
| |
| 引用本文： | 周凤蛟,周南生.Al/TiSi_2/Si系统与肖特基势垒二极管的热稳定性[J].固体电子学研究与进展,1992,12(1):44-47. |
| |
| 作者姓名： | 周凤蛟 周南生 |
| |
| 作者单位： | 西安电子科技大学微电子研究所 710071
(周凤蛟，周南生)，西安电子科技大学微电子研究所 710071(严北平) |
| |
| 摘 要： | 本文用x射线衍射及I—V测量法研究了Al/TiSi_2/Si系统热稳定性及肖特基势垒特性。热稳定性的研究结果表明;系统在550℃以下退火是热稳定的;在更高的温度下退火,Al开始与TiSi_2起反应,形成了(Ti_7Al_5)Si-(12)三元化合物。在进行电特性研究时,发现系统在450℃退火时,Al已渗透TiSi_2而使肖特基势垒二极管失效。
|
| 关 键 词： | 硅化物 肖特基势垒 热稳定性 退火 |
Thermal Stability of Al/TiSi_2/Si System Schottky Diodes |
| |
| Zhou Fengjiao,Zhou Nansheng,Yan Beiping.Thermal Stability of Al/TiSi_2/Si System Schottky Diodes[J].Research & Progress of Solid State Electronics,1992,12(1):44-47. |
| |
| Authors: | Zhou Fengjiao Zhou Nansheng Yan Beiping |
| |
| Abstract: | We have examined the stability and Schottky characteristic of Al/TiSi2/Si system using X-ray diffraction as well as current-voltage measurement. The studied results of thermal stability exhibit that the system can keep thermal stability at annealing temperature up to 550℃. As the annealing temperature increases, Al interacts with TiSi2 to form (Ti7Al5)Si12 intermetallic compound. From current-voltage measurement , it is known that Al diffuses through the titanium silicide layer and make the Schottky barrier diode failure at 450℃. |
| |
| Keywords: | Silicide Schottky Barrier Thermostability Annealing |
| 本文献已被 CNKI 维普 等数据库收录！ |
