| Ka频段低噪声放大器的设计 |
| |
| 引用本文： | 王军贤.Ka频段低噪声放大器的设计[J].固体电子学研究与进展,1998,18(3):280-284. |
| |
| 作者姓名： | 王军贤 |
| |
| 作者单位： | 南京电子器件研究所!210016 |
| |
| 摘 要： | 介绍了Ka频段低噪声放大器的设计方法，采用HP－EESOF公司Libra软件对有源器件进行直流分析与参数提取，并运用小信号线性分析法进行电路模拟与设计。研制的放大器在34－36GHz频率下噪声系数小于3dB。
|
| 关 键 词： | 毫米波 HEMT 低噪声放大器 |
The Design of a Ka-band Low Noise Amplifier |
| |
| Wang Junxian.The Design of a Ka-band Low Noise Amplifier[J].Research & Progress of Solid State Electronics,1998,18(3):280-284. |
| |
| Authors: | Wang Junxian |
| |
| Abstract: | This paper describes the design of a Ka-band HEMT low noise amplifier. The active device parameters are obtained with DC analysis and the circuits aresimulated with a small signal linear analysis by Libra softwave. The amplifier exhibits a noise figure of less than 3. 0 dB from 34 to 36 GHz. |
| |
| Keywords: | Millimeter Wave HEMT LNA |
| 本文献已被 CNKI 维普 等数据库收录！ |
