6H-SiC MOS场效应晶体管的研制

报道了多晶硅栅 6 H- Si C MOS场效应器件的制造工艺和器件性能。 6 H- Si C氧化层的SIMS分析说明在氧化过程中 ,多余的 C以 CO的形式释放 ,铝元素逸出极少 ,氧化层中因有较多的铝而正电荷密度较大 ,Si C的氧化速率和掺杂类型关系不大。器件漏电流都有很好的饱和特性 ,最大跨导为 0 .36 m S/ mm ,沟道电子迁移率约为 14cm2 / V.s,但串联电阻效应明显。

Study of 6H-SiC MOSFET

The device structure and mask plates are designed to fabricate an enhanced MOSFET of 6H SiC. The fabrication processes suitable to SiC devices are developed. It is found from SIMS measurement that the excess carbon escapes from the samples as CO, but aluminum is injected into oxide film from epitaxial layer, so there are many positive charges in the oxide. The oxidation rate has no relation with epitaxial type. The devices have very good drain current saturation as the drain voltage increases. The maximum transconductance is 0.36 mS/mm and the effective electron mobility is estimated to be 14cm 2/V·s. However, it also shows that there is remarkable parasitic resistance effect for these devices to need reduction.