| 带电粒子辐射对GaAs/AlGaAs多量子阱光学性质的影响 |
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| 引用本文： | 邹睿,林理彬.带电粒子辐射对GaAs/AlGaAs多量子阱光学性质的影响[J].固体电子学研究与进展,2002,22(4):404-407. |
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| 作者姓名： | 邹睿 林理彬 |
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| 作者单位： | 四川大学物理系,成都,610064 |
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| 基金项目： | 国家自然科学基金资助项目 (695 7610 7)，全国高校博士点基金资助项目 |
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| 摘 要： | 利用光荧光谱研究了带电粒子辐照对 Ga As/Al Ga As多量子阱光学性质的影响。用能量为 1 Me V、注量为 1 0 1 3～ 1 0 1 6 /cm2 的电子辐照 ,模拟太空环境下范艾仑带对多量子阱的辐射。辐射后在 45 0℃真空环境下退火 5分钟 ,测量了辐照前后材料的荧光谱。发现量子阱特征峰 772 nm(E=1 .61 e V)辐照后峰位不变 ,峰高有所降低 ,但退火后峰高有所恢复 ,仍比辐照前要低 ;注量为 1 0 1 6 /cm2 的样品中 Ga As的 D0 ～ A0 对复合发光峰 83 2nm(E=1 .49e V)消失。对此结果进行了讨论 ,并与质子辐照的情况作了比较。
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| 关 键 词： | 电子辐照 退火 光荧光谱 |
| 文章编号： | 1000-3819(2002)04-404-04 |
| 修稿时间： | 2001年12月25 |
Irradiation Effects on Optic Character in GaAs/AlGaAs Quantum Wells |
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| ZOU Rui,LIN Libin.Irradiation Effects on Optic Character in GaAs/AlGaAs Quantum Wells[J].Research & Progress of Solid State Electronics,2002,22(4):404-407. |
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| Authors: | ZOU Rui LIN Libin |
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| Abstract: | The optic character in GaAs/AlGaAs quantum wells was studied under the influence of electron irradiation using the photoluminescence spectra.In order to simulate space environment the quantum wells were irradiated with 1 MeV electron beams and doses from 10 13 /cm 2 to 10 16 /cm 2.The relationship between photoluminescence character of the samples and electron irradiation doses was gained.The results showed that the characteristic photoluminescence peaks of quantum wells were decreased more as the doses increased but they didn't disappear.The peaks of D 0～A 0 couples in GaAs disappeared after the samples were annealed at 450 ℃.We discussed the results and contrasted it with proton irradiation. |
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| Keywords: | electron irradiation annealing photoluminescence spectra |
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