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Reduced turn-on delay time in 1.3 μm InGaAsP/lnP n-typemodulation-doped strained multiquantum well lasers |
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| Authors: | Nakahara K Uomi K Tsuchiya T Niwa A |
| Affiliation: | Central Res. Lab., Hitachi Ltd., Kokubunji; |
| Abstract: | Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.3 μm InGaAsP strained multiquantum well lasers for the first time |
| Keywords: | |