On-resistance of V-v.m.o.s. power transistors |
| |
| Authors: | Lane WA Salama CAT Dmitrevsky S |
| |
| Affiliation: | University of Toronto, Department of Electrical Engineering, Toronto, Canada; |
| |
| Abstract: | An expression for the on-resistance of a V-groove vertical-channel m.o.s. (V-v.m.o.s.) transistor is presented. The expression relates the on-resistance to the geometry and resistivity of the drain drift region and is useful in optimising the drift region parameters for minimum on-resistance and maximum drain-source breakdown. |
| |
| Keywords: | |
|
|
