Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching |
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| Authors: | Seto M Deri RJ Schiavone LM Bhat R Soole JBD Schumacher H Andreadakis NC Koza M |
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| Affiliation: | Bell Commun. Res., Red Bank, NJ, USA; |
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| Abstract: | It is shown that reactive ion etching can be used for mesa etching and selfaligned contact cap removal in InP/InGaAs photodiode fabrication, without inducing unacceptable diode leakage currents. Mesa diodes with approximately 100 nA leakage, 90% quantum efficiency, and 12 GHz bandwidth at 5 V bias and 1.3 mu m wavelength, and pairs and quadruplets of such detectors for coherent lightwave systems are demonstrated.<> |
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