Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 /spl mu/m |
| |
| Authors: | Gupta JA Barrios PJ Zhang X Lapointe J Poitras D Pakulski G Wu X Delage A |
| |
| Affiliation: | Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada; |
| |
| Abstract: | The first 1.55 /spl mu/m room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3/spl times/589 /spl mu/m device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70/spl deg/C. |
| |
| Keywords: | |
|
|
