Collector/emitter offset voltage in double-heterojunction bipolar transistors |
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Authors: | Hayes JR Gossard AC Wiegmann W |
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Affiliation: | Bell Communications Research Inc., Murray Hill, USA; |
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Abstract: | Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 ? compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage. |
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