Low dissipation current GaAs prescaler IC |
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| Authors: | Hasegawa K Uenoyama T Nishii K Onuma T |
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| Affiliation: | Matsushita Electric Industrial Co. Ltd., Semiconductor Research Center, Moriguchi, Japan; |
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| Abstract: | A 1 GHz variable modulus freqency divider with very low dissipation current has been developed. Using a high-transconductance (200?250 mS/mm) FET by Pt burying technology and series gating source-coupled FET logic, the dissipation current of the fabricated IC was reduced to 3.2 mA at 1 GHz operation. |
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