| 0.9V2.4GHz CMOS低噪声放大器设计 |
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| 引用本文： | 杨虹,余运涛.0.9V2.4GHz CMOS低噪声放大器设计[J].电子质量,2011(1):37-39,46. |
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| 作者姓名： | 杨虹 余运涛 |
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| 作者单位： | 重庆邮电大学光电工程学院; |
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| 基金项目： | 重庆市教委科学技术研究项目(KJ100512); 重庆市自然科学基金项目(CSTC2010BB2412) |
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| 摘 要： | 使用TSMC0.18μm RF CMOS工艺,设计一个低电压折叠式共源共栅结构低噪声放大器(LNA).利用性能系数FoM(Figure of Merit)衡量其整体性能,并通过仿真找到使FoM最大的偏置电压.使用Cadence SpectreRF仿真表明,在0.9V电源下,2.4GHz处的反射系数良好.噪声系数NF仅为...
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| 关 键 词： | 低噪声放大器 低电压 折叠式共源共栅 性能系数 噪声 增益 |
Design of 0.9V 2.4GHz CMOS Low Noise Amplifier |
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| Yang Hong,Yu Yun-tao.Design of 0.9V 2.4GHz CMOS Low Noise Amplifier[J].Electronics Quality,2011(1):37-39,46. |
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| Authors: | Yang Hong Yu Yun-tao |
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| Affiliation: | Yang Hong,Yu Yun-tao(Institute of Optoelectronic Engeering,Chongqing University of Posts and Telecommunications,Chongqing 400065) |
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| Abstract: | A low voltage folded-cascode low noise amplifier was designed based on TSMC’s 0.18μm CMOS technology.Utilizing FoM to evaluate its overall performances,and the bias voltage that maximized FoM has been founded through simulation.Cadence SpectreRF simulation results showed that,under 0.9V power supply,reflection coefficients were good,noise figure was 0.82dB,forward gain was 18.84dB,input-refered third-order intercept point was -10.3dBm and power dissipation was 5.12mW,which indicate the method used in this paper could provide direction for narrow-band LNA design. |
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| Keywords: | low noise amplifier low voltage folded-cascode Figure of Merit noise gain |
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