| IC外延电阻相似失效案例的比较与分析 |
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| 引用本文： | 周桂丽,赵铝虎,周卫宏.IC外延电阻相似失效案例的比较与分析[J].电子质量,2013(6):17-24. |
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| 作者姓名： | 周桂丽 赵铝虎 周卫宏 |
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| 作者单位： | 华越微电子有限公司,浙江绍兴,312016 |
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| 摘 要： | 该文通过分析外延层外延电阻率变化,场注入偏浓和埋层上浮三个IC制品生产线最常见的典型案例,比较明确三者之间的异同,了解和认识PCM相关参数的变化情况。同时也记录不同失效类型,并予以归类。
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| 关 键 词： | 外延电阻 埋层上浮 场注入 |
The Comparison and Analysis of Similar Failure Cases about IC Epitaxial Resistance |
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| Zhou Gui-li
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Zhao Lv-hu
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Zhou Wei-hong.The Comparison and Analysis of Similar Failure Cases about IC Epitaxial Resistance[J].Electronics Quality,2013(6):17-24. |
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| Authors: | Zhou Gui-li Zhao Lv-hu Zhou Wei-hong |
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| Affiliation: | (HuaYue Microelectronies CO.,LTD.,Zhejiang Shaox- ing 312016) |
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| Abstract: | Based on the analysis of three typical failure cases in IC manufacturing line,which including epi- taxial resistance variation.,excessive filed ion-immission and the floating N＋B.Through comparing the simi- larities and differences between them,we can understand and grasp the changes of PCM parameters quickly.It＇s also convenient for sorting out and calssifying different failure modes. |
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| Keywords: | epitaxial resistance floating N＋B filed ion immission |
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