| 烧结温度对AZO热压靶材性能影响研究 |
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| 引用本文： | 白雪,王星明,韩仓,储茂友,段华英,孙静.烧结温度对AZO热压靶材性能影响研究[J].稀有金属,2011,35(6). |
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| 作者姓名： | 白雪 王星明 韩仓 储茂友 段华英 孙静 |
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| 作者单位： | 北京有色金属研究总院矿物资源与冶金材料研究所,北京,100088 |
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| 基金项目： | 国家科研院所技术开发研究专项基金 |
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| 摘 要： | 以ZnO和Al2O3粉体为原料,采用热压烧结制备AZO靶材.通过阿基米德法测量靶材的密度,压汞法测量靶材的孔径分布,扫描电镜观察靶材的断面形貌,研究了热压温度对AZO靶材密度、气孔演化和显微结构的影响.结果表明:根据烧结温度的不同,AZO靶材热压致密化过程分为两个阶段:850～1050℃,随着温度的升高,连通气孔发生合并与收缩,孔径分布逐渐集中化,同时闭孔率逐渐减小,在1050℃具有最低值0.104％.这一阶段的主要特征是致密化速率较快,存在相互连通的气孔.当温度升至1150℃,颗粒之间结合紧密,孔隙率降至5.21％.这一阶段的主要特征是气孔全部闭合.将所制备的靶材作为溅射源,进行射频磁控镀膜测试.采用台阶仪测量膜厚,紫外分光光度计测量薄膜透光率,四探针电阻图谱仪测量薄膜电阻率,XRD分析物相的结构.镀膜测试结果显示,在相同的溅射条件下,靶材孔隙率越低,沉积速率越快,所得薄膜电阻率越低,但溅射功率较高时薄膜透光率明显减小.平均孔径较小且孔径分布集中的靶材,溅射所得薄膜电阻率较低.在溅射功率密度为3.9 W·cm-2下,相对密度高于80％的AZO靶材,靶材寿命大于150 W·h.相对密度为94.79％的靶材在溅射功率30W下沉积20 min得到薄膜的电阻率为3.14×10-4Ω·cm,平均透过率大于85％,具有002择优取向,满足薄膜太阳能对透明导电薄膜性能的要求.
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| 关 键 词： | AZO靶材 热压 薄膜 溅射 |
Influence of Sintering Temperature on Properties of AZO Hot Pressing Target |
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| Bai Xue,Wang Xingming,Han Cang,Chu Maoyou,Duan Huaying,Sun Jing.Influence of Sintering Temperature on Properties of AZO Hot Pressing Target[J].Chinese Journal of Rare Metals,2011,35(6). |
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| Authors: | Bai Xue Wang Xingming Han Cang Chu Maoyou Duan Huaying Sun Jing |
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| Affiliation: | Bai Xue,Wang Xingming,Han Cang,Chu Maoyou,Duan Huaying,Sun Jing(Mining Metallurgy and Materials Research Institute,General Research Institute for Non-Ferrous Metals,Beijing 100088,China) |
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| Abstract: | AZO targets were prepared by hot-pressing using ZnO and Al2O3 mixture powder as raw materials.The influence of hot-pressing temperature on target density was studied,and the porosity evolution and microstructure were carried on by method listed below: the density of target was measured by Archimedes method.The pore size distribution of the target was measured by mercury intrusion porosimeter and fracture morphology of AZO target was observed through SEM.The results showed that hot-pressing densification pro... |
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| Keywords: | AZO targets hot-pressing film sputtering |
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