| 化学气相沉积技术与材料制备 |
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| 引用本文： | 胡昌义,李靖华. 化学气相沉积技术与材料制备[J]. 稀有金属, 2001, 25(5): 364-368 |
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| 作者姓名： | 胡昌义 李靖华 |
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| 作者单位： | 昆明贵金属研究所, |
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| 基金项目： | 云南省应用基础研究资助项目(2000E0085M) |
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| 摘 要： | 概述化学气相沉积技术是一般原理与技术，总结化学气相沉积技术在材料制备方面的发展与应用状况，着重介绍化学气相沉积技术在制备贵金属薄膜和涂层领域的最新进展。
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| 关 键 词： | 化学气相沉积 材料制备 贵金属 薄膜 涂层 |
| 文章编号： | 0258-7076(2001)05-0364-05 |
| 修稿时间： | 2001-01-02 |
Chemical Vapor Deposition and Preparation of Materials |
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| Hu Changyi and Li Jinghua. Chemical Vapor Deposition and Preparation of Materials[J]. Chinese Journal of Rare Metals, 2001, 25(5): 364-368 |
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| Authors: | Hu Changyi and Li Jinghua |
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| Abstract: | The general rule and technology of chemical vapor deposition(CVD) were introduced first. The development and application of CVD technology in preparation of materials were reviewed, especially in the preparation of films and coatings of precious metals. |
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| Keywords: | Chemical vapor deposition Material preparation Precious metals |
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