|
|||||
|
|
Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process |
|
| Affiliation: | 1. Institute of Modern Physics, Chinese Academy of Science, Lanzhou 730000, China 2. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
| Abstract: | The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed ins |
| Keywords: | nuclear radiation detector two-step annealing reverse body resistance |
| 本文献已被 万方数据 等数据库收录！ | |