Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...