Adsorbed O2 on the Graphite‐Induced Growth of Ultra‐Long Single‐Crystalline 6H–SiC Nanowires

Large‐scale ultra‐long 6H–SiC nanowires were in situ synthesized on the as‐prepared SiC–Si ceramic substrate using graphite as the carbon source and substrate as the silicon source via improving the adsorbed O₂ content on the graphite precursors using milling technology. The as‐grown nanowires were typical single crystal of hexagonal 6H–SiC with diameters of 50–100 nm and lengths of up to several millimeters (or even centimeters). Vapor‐solid mechanism was proposed for the growth mode of the as‐grown ultra‐long 6H–SiC nanowires. This study not only provided new insight into the growth mode for in situ synthesizing 6H–SiC nanowires on silicon‐based ceramics, but also suggested a new design methodology for synthesizing ultra‐long nanowires.