Phase evolution,crystal structure,and microwave dielectric properties of gillespite-type ceramics

A gillespite-structured MCuSi₄O₁₀ (M = Ba_1-xSr_x, Sr_1-xCa_x) ceramics with tetrahedral structure (P4/ncc) were prepared by solid-state reaction method. X-ray diffraction and thermogravimetry with differential scanning calorimetry (TG-DSC) were employed to study the phase synthesis process of BaCuSi₄O₁₀. Pure BaCuSi₄O₁₀ phase was obtained at 1075°C and decomposed into BaSiO₃, BaCuSi₂O₆, and SiO₂ when calcined at 1200°C. The relationships between the crystal structure and microwave dielectric properties of MCuSi₄O₁₀ ceramics were revealed based on the Rietveld refinement and P-V-L complex chemical bond theory. The dielectric constant (ε_r) decreased linearly with decreasing total bond susceptibility and ionic polarizability. Quality factor (Q × f) was closely dependent on bond strength and lattice energy. The temperature coefficient of resonant frequency (τ_f) was controlled by the stability of CuO₄]^6? plane in MCuSi₄O₁₀. Optimum microwave dielectric properties were obtained for SrCuSi₄O₁₀ when sintered at 1100°C for 3 hours with a ε_r of 5.59, a Q × f value of 82 252 GHz, and a τ_f of ?41.34 ppm/°C. Thus, SrCuSi₄O₁₀ is a good candidate for millimeter-wave devices.