Domain Reengineering of the [011]‐Poled PMN–0.35PT Single Crystals for Dielectric Bolometer Arrays

The domain configuration was reengineered with a modified poling procedure for the 011]‐poled single‐domain PMN–0.35PT crystals located at the morphotropic phase boundary. As a consequence, the dielectric constant ε_r at room temperature was significantly enhanced by more than 10 times to about 18 000, extremely higher than the reported (1 ? x)Pb(Mg_1/3Nb_2/3)O₃‐xPbTiO₃ ferroelectric crystals. Besides, the decreasing rate of the dielectric constant (dε_r/dT) was about 300/K with a temperature coefficient (α) of 1.7%/K, comparable to the BST materials for dielectric bolometer applications. The ferroelectric phase transition behavior was investigated to establish the poling procedure and a thermal hysteresis of about 25°C was indicated across the room temperature for the orthorhombic–tetragonal phase transition, which contributed to the revolution of the domain pattern.